GMBT4403 datasheet(1/2 Pages) GTM

Part #	GMBT4403

Description	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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ISSUED DATE :2001/09/20

REVISED DATE :2006/02/08B

GM BT4403

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GMBT4403 is designed for general purpose applications requiring high breakdown voltage.

Features

&High DC Current Gain: 100-300 at 150mA

&Complementary to GMBT4401

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-55 ~ +150

:

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-40

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

-600

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics (Ta = 25 : , unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

IC=-100uA

BVCEO

-40

-

V

IC=-1mA

BVEBO

-5

-

V

IE=-10uA

ICEX

-

-100

nA

VCE=-35V, VBE=-0.4V

*VCE(sat)1

-

-400

mV

IC=-150mA, IB=-15mA

*VCE(sat)2

-

-750

mV

IC=-500mA, IB=-50mA

*VBE(sat)1

-

-950

mV

IC=-150mA, IB=-15mA

*VBE(sat)2

-

-1.3

V

IC=-500mA, IB=-50mA

*hFE1

30

-

VCE=-1V, IC=-0.1mA

*hFE2

60

-

VCE=-1V, IC=-1mA

*hFE3

100

-

VCE=-1V, IC=-10mA

*hFE4

100

-

300

VCE=-2V, IC=-150mA

*hFE5

20

-

VCE=-2V, IC=-500mA

fT

200

-

MHz

VCE=-10V, IC=-20mA, f=100MHz

Cob

-

8.5

pF

VCE=-10V, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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