M58LT256JST datasheet(1/106 Pages) STMICROELECTRONICS

Part #	M58LT256JST

Description	256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories

PDF	106 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 106 page

June 2007

Rev 2

1/106

1

M58LT256JST

M58LT256JSB

256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)

1.8 V supply, secure Flash memories

Features

■

Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase

and read

–VDDQ = 2.7 V to 3.6 V for I/O Buffers

–VPP = 9 V for fast program

■

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 52 MHz

– Random access: 85 ns

– Asynchronous Page Read mode

■

Synchronous Burst Read Suspend

■

Programming time

– 5 µs typical Word program time using

Buffer Enhanced Factory Program

command

■

Memory organization

– Multiple Bank memory array: 16 Mbit banks

– Parameter Blocks (top or bottom location)

■

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■

Block protection

– All blocks protected at Power-up

– Any combination of blocks can be protected

with zero latency

– Absolute Write Protection with VPP = VSS

■

Security

– Software security features

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

■

Common Flash Interface (CFI)

■

100 000 program/erase cycles per block

■

Electronic signature

– Manufacturer Code: 20h

– Top Device Codes:

M58LT256JST: 885Eh

– Bottom Device Codes

M58LT256JSB: 885Fh

■

TBGA64 package

– ECOPACK® compliant

TBGA64 (ZA)

10 x 13 mm

BGA

www.st.com

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M58LT256JST Datasheet(PDF) 1 Page - STMicroelectronics

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