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STB50NE10 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB50NE10 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  June 2006 Rev 5 1/13 13 STB50NE10 N-channel 100V - 0.021 Ω - 50A - D2PAK STripFET™ Power MOSFET General features ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STB50NE10 100V <0.027 Ω 50A D2PAK 1 3 www.st.com Order codes Part number Marking Package Packaging STB50NE10T4 B50NE10 D2PAK Tape & reel |
Similar Part No. - STB50NE10_06 |
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Similar Description - STB50NE10_06 |
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