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MBR8H100MFS Datasheet(PDF) 1 Page - ON Semiconductor |
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MBR8H100MFS Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 6 page ![]() DATA SHEET www.onsemi.com © Semiconductor Components Industries, LLC, 2015 June, 2024 − Rev. 5 1 Publication Order Number: MBR8H100MFS/D Switch Mode Power Rectifiers MBR8H100MFS, NRVB8H100MFS Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • WF Suffix for Products with Wettable Flanks • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 8.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 75 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA Device Package Shipping† ORDERING INFORMATION MBR8H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 100 VOLTS 1,2,3 5,6 SO−8 FLAT LEAD CASE 488AA STYLE 2 B8H100 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability MARKING DIAGRAM B8H100 AYWZZ A A A Not Used C C 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. SO−8 FL (Pb−Free) 1500 / Tape & Reel SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB8H100MFSWFT1G NRVB8H100MFSWFT3G (FULL−CUT SO8FL WF) CASE 507BA DFNW5 MBR8H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB8H100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB8H100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel DISCONTINUED (Note 1) 1. DISCONTINUED: These devices are not recommended for new design. Please contact your onsemi representative for information. The most current information on these devices may be available on www.onsemi.com. |
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