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MBR8H100MFS Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBR8H100MFS
Description  Switch Mode Power Rectifiers
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR8H100MFS Datasheet(HTML) 1 Page - ON Semiconductor

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DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2015
June, 2024 − Rev. 5
1
Publication Order Number:
MBR8H100MFS/D
Switch Mode Power
Rectifiers
MBR8H100MFS,
NRVB8H100MFS
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• WF Suffix for Products with Wettable Flanks
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 162°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
75
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
75
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA
Device
Package
Shipping†
ORDERING INFORMATION
MBR8H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
100 VOLTS
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B8H100 = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
MARKING DIAGRAM
B8H100
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB8H100MFSWFT1G
NRVB8H100MFSWFT3G
(FULL−CUT SO8FL WF)
CASE 507BA
DFNW5
MBR8H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB8H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB8H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
DISCONTINUED (Note 1)
1. DISCONTINUED: These devices are not
recommended for new design. Please contact
your onsemi representative for information.
The most current information on these devices
may be available on www.onsemi.com.


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