GSC4409 datasheet(2/4 Pages) GTM

2 / 4 page

GSC4409

Page: 2/4

ISSUED DATE :2006/10/19

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID=-250uA

Gate Threshold Voltage

VGS(th)

-1.4

-2.7

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-5V, ID=-15A

Gate-Source Leakage Current

IGSS

±100

VGS= ±20V

Drain-Source Leakage Current(Tj=25 )

-5

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=55 )

IDSS

-25

VDS=-24V, VGS=0

7.5

VGS=-10V, ID=-15A

Static Drain-Source On-Resistance2

RDS(ON)

VGS=-4.5V, ID=-10A

Total Gate Charge2

100

120

Gate-Source Charge

Qgs

14.5

Gate-Drain (“Miller”) Change

Qgd

ID=-15A

VDS=-15V

VGS=-10V

Turn-on Delay Time2

Td(on)

Rise Time

16.5

Turn-off Delay Time

Td(off)

76.5

Fall Time

37.5

VDS=-15V

VGS=-10V

RG=3

RL=1

Input Capacitance

Ciss

5270

6400

Output Capacitance

Coss

945

Reverse Transfer Capacitance

Crss

745

VGS=0V

VDS=-15V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.0

IS=-1.0A, VGS=0V

Continuous Source Current (Body Diode)

-5

VD= VG=0V, VS=-1.0V

Reverse Recovery Time2

Trr

36.7

Reverse Recovery Charge

Qrr

IS=-15A, VGS=0V

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.

GSC4409 Datasheet(PDF) 2 Page - GTM CORPORATION

GSC4409 Datasheet(HTML) 2 Page - GTM CORPORATION

Html Pages

1 2 3 4

Datasheet Download

Link URL