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GSMBT2222A Datasheet(PDF) 1 Page - GTM CORPORATION |
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GSMBT2222A Datasheet(HTML) 1 Page - GTM CORPORATION |
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1 / 2 page ![]() CORPORATION 1/2 ISSUED DATE :2005/01/12 REVISED DATE : GSM BT2222A N N P P N N E E P P II T T A A X X II A A L L P P L L A A N N A A R R T T R R A A N N S S II S S T T O O R R Description The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features &High frequency current gain &High speed switching &For complementary use with PNP type GSMBT2907A Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.80 1.10 L1 0.42 REF. A1 0 0.10 L 0.15 0.35 A2 0.80 1.00 b 0.25 0.40 D 1.80 2.20 c 0.10 0.25 E 1.15 1.35 e 0.65 REF. HE 1.80 2.40 Q1 0.15 BSC. Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage at Ta=25 : VCBO 75 V Collector to Emitter Voltage at Ta=25 : VCEO 40 V Emitter to Base Voltage at Ta=25 : VEBO 6 V Collector Current at Ta=25 : IC 600 mA Total Power Dissipation at Ta=25 : PD 225 mW Characteristics at Ta = 25 :::: Symbol Min. Typ. Max. Unit Test Conditions BVCBO 75 - - V IC=100uA , IE=0 BVCEO 40 - - V IC=10mA,IB=0 BVEBO 6 - - V IE=10uA ,IC=0 ICBO - - 10 nA VCB=60V, IE=0 ICEX - - 10 nA VCE=60V ,VEB(OFF)=3V IEBO - - 10 nA VEB=3V *VCE(sat)1 - - 500 mV IC=380mA, IB=10mA *VCE(sat)2 - - 1.0 V IC=500mA, IB=50mA *VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA *VBE(sat)2 - - 2.0 V IC=500mA, IB=50mA *hFE1 35 - - VCE=10V, IC=100uA *hFE2 50 - - VCE=10V, IC=1mA *hFE3 75 - - VCE=10V, IC=10mA *hFE4 100 - 300 VCE=10V, IC=150mA *hFE5 40 - - VCE=10V, IC=500mA fT 300 - - MHz VCB=20V, IC=20mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% |
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Similar Description - GSMBT2222A |
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