HIT647 datasheet(2/5 Pages) RENESAS

Part #	HIT647

Description	Silicon PNP Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

Rev.2.00 Mar 05, 2007 page 2 of 4

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

-120

—

IC = -100

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

-100

—

IC = -10 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

-6

—

IE = -100

µA, IC = 0

Collector cutoff current

ICBO

—

-500

VCB = -120 V, IE = 0

Emitter cutoff current

IEBO

—

-500

VEB = -6 V, IC = 0

DC current transfer ratio

hFE1

140

—

350

—

VCE = -2 V, IC = -150 mA

hFE2

—

VCE = -5 V, IC = -1 A

Collector to emitter saturation voltage

VCE(sat)

—

-0.5

IC = -500 mA, IB = -50 mA

Base to emitter saturation voltage

VBE(sat)

—

-1.1

IC = -500 mA, IB = -50 mA

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