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2SB764 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SB764 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SB764/2SD863 No.575–2/4 k n a RD E F h E F 0 2 1 o t 0 60 0 2 o t 0 0 10 2 3 o t 0 6 1 r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n o i t a r u t a S r e t t i m E - o t - r o t c e ll o CV ) t a s ( E C IC I , A m 0 0 5 ) – ( = B A m 0 5 ) – ( = ) 2 . 0 – () 7 . 0 – (V 5 1 . 05 . 0V e g a t l o V n o i t a r u t a S r e t t i m E - o t - e s a BV ) t a s ( E B IC I , A m 0 0 5 ) – ( = B A m 0 5 ) – ( =5 8 . 0 ) – (2 . 1 ) – (V e g a t l o V n w o d k a e r B e s a B - o t - r o t c e ll o CV O B C ) R B ( IC I , A µ 0 1 ) – ( = E 0 =0 6 ) – (V e g a t l o V n w o d k a e r B r e t t i m E - o t - r o t c e ll o CV O E C ) R B ( IC R , A m 1 ) – ( = E B =∞ 0 5 ) – (V e g a t o V n w o d k a e r B e s a B - o t - r e t t i m EV O B E ) R B ( IE I , A µ 0 1 ) – ( = C 0 =5 ) – (V * : The SB764/2SD863 are classified by 50mA hFE as follows : Continued from preceding page. 5 100 1000 3 2 3 5 2 10 1.0 10 100 1000 hFE -- IC ITR08350 23 5 2 3 2 3 52 3 5 0 0 --2 --4 --6 --8 --12 --10 IC -- VCE ITR08345 --1000 --800 --600 --400 --200 IB=0 --10mA --8mA --6mA --4mA --3mA --2mA --1mA 2SB764 0 02 4 6 8 12 10 IC -- VCE ITR08346 1000 800 600 400 200 IB=0 2SD863 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 IC -- VCE ITR08347 --1000 --800 --600 --400 --200 IB=0 --30mA --20mA --10mA --6mA --4mA --2mA 2SB764 0 0 0.2 0.4 0.6 0.8 1.2 1.0 IC -- VCE ITR08348 1000 800 600 400 200 IB=0 20mA 10mA 6mA 4mA 2mA 2SD863 IC -- VBE ITR08349 400 200 0 1200 1000 800 600 0.4 0.6 0.8 1.0 1.2 00.2 VCE=2V (For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.) 2SD863 2SB764 VCE=2V 6mA 4mA 3mA 2mA 1mA Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, VCE – V Base-to-Emitter Voltage, VBE – V Collector Current, IC – mA |
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