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MBRF10H150CTG Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBRF10H150CTG
Description  Switch-mode Power Rectifier 150 V, 10 A
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRF10H150CTG Datasheet(HTML) 2 Page - ON Semiconductor

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MBRF10H150CTG
www.onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
Average Rectified Forward Current
(Per Leg)
(Rated VR) TC = 142°C
(Per Device)
IF(AV)
5
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Operating Junction Temperature (Note 1)
TJ
−20 to +150
°C
Storage Temperature
Tstg
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
− Junction−to−Case
RqJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
vF
0.85
0.63
0.69
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
45
20
mA
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping†
MBRF10H150CTG
TO−220FP
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.



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