MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

MMSD301T1G, SMMSD301T1G

MMSD701T1G, SMMSD701T1G

V(BR)R

30

70

−

−

−

−

V

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

MMSD301T1G, SMMSD301T1G

MMSD701T1G, SMMSD701T1G

CT

−

−

0.9

0.5

1.5

1.0

pF

Total Capacitance

(VR = 15 V, f = 1.0 MHz)

MMSD301T1G, SMMSD301T1G

(VR = 20 V, f = 1.0 MHz)

MMSD701T1G, SMMSD701T1G

CT

−

−

0.9

0.5

1.5

1.0

pF

Reverse Leakage

(VR = 25 V)

MMSD301T1G, SMMSD301T1G

(VR = 35 V)

MMSD701T1G, SMMSD701T1G

IR

−

−

13

9.0

200

200

nAdc

Forward Voltage

(IF = 1.0 mAdc)

MMSD301T1G, SMMSD301T1G

(IF = 10 mA)

(IF = 1.0 mAdc)

MMSD701T1G, SMMSD701T1G

(IF = 10 mA)

VF

−

−

−

−

0.38

0.52

0.42

0.7

0.45

0.6

0.5

1.0

Vdc