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PIC12F683-E/MDQTP Datasheet(PDF) 122 Page - Microchip Technology

Part # PIC12F683-E/MDQTP
Description  8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PDF  176 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC12F683-E/MDQTP Datasheet(HTML) 122 Page - Microchip Technology

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PIC12F683
DS41211D-page 120
© 2007 Microchip Technology Inc.
15.4
DC Characteristics:
PIC12F683-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min
Typ†
Max
Units
Conditions
VDD
Note
D020E
Power-down Base
Current (IPD)(2)
—0.05
9
μA
2.0
WDT, BOR, Comparators, VREF and
T1OSC disabled
—0.15
11
μA3.0
—0.35
15
μA5.0
D021E
—
1
17.5
μA
2.0
WDT Current(1)
—2
19
μA3.0
—3
22
μA5.0
D022E
—
42
65
μA
3.0
BOR Current(1)
—85
127
μA5.0
D023E
—
32
45
μA
2.0
Comparator Current(1), both
comparators enabled
—60
78
μA3.0
—120
160
μA5.0
D024E
—
30
70
μA2.0
CVREF Current(1) (high range)
—45
90
μA3.0
—75
120
μA5.0
D025E*
—
39
91
μA2.0
CVREF Current(1) (low range)
—59
117
μA3.0
—98
156
μA5.0
D026E
—
4.5
25
μA
2.0
T1OSC Current(1), 32.768 kHz
—5
30
μA3.0
—6
40
μA5.0
D027E
—
0.30
12
μA
3.0
A/D Current(1), no conversion in
progress
—0.36
16
μA5.0
*
These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral
Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.



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