PIC12F683-ESLASHMDQTP datasheet(125/176 Pages) MICROCHIP

125 / 176 page

DS41211D-page 123

PIC12F683

15.6

Thermal Considerations

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +125°C

Param

No.

Sym

Characteristic

Typ

Units

Conditions

TH01

θJA

Thermal Resistance

Junction to Ambient

84.6

°C/W

8-pin PDIP package

163.0

°C/W

8-pin SOIC package

52.4

°C/W

8-pin DFN-S 4x4x0.9 mm package

46.3

°C/W

8-pin DFN-S 6x5 mm package

TH02

θJC

Thermal Resistance

Junction to Case

41.2

°C/W

8-pin PDIP package

38.8

°C/W

8-pin SOIC package

3.0

°C/W

8-pin DFN-S 4x4x0.9 mm package

2.6

°C/W

8-pin DFN-S 6x5 mm package

TH03

Junction Temperature

150

°C

For derated power calculations

TH04

Power Dissipation

—

PD = PINTERNAL + PI/O

TH05

PINTERNAL

Internal Power Dissipation

—

PINTERNAL = IDD x VDD

(NOTE 1)

TH06

PI/O

I/O Power Dissipation

—

PI/O =

Σ (IOL * VOL) + Σ (IOH * (VDD - VOH))

TH07

PDER

Derated Power

—

PDER = (TJ - TA)/

θJA

(NOTE 2, 3)

Note 1:

IDD is current to run the chip alone without driving any load on the output pins.

TA = Ambient Temperature.

Maximum allowable power dissipation is the lower value of either the absolute maximum total power

dissipation or derated power (PDER).

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