Nexperia

BSR33PAS

80 V, 1 A PNP medium power transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -60 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

ICBO

collector-base cut-off

current (emitter open)

VCB = -60 V; IE = 0 A; Tj = 150 °C

-

-

-50

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

VCE = -5 V; IC = -100 µA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

30

-

-

VCE = -5 V; IC = -100 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

100

-

300

hFE

DC current gain

VCE = -5 V; IC = -500 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

50

-

-

IC = -150 mA; IB = -15 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

-

-

-0.25

V

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

-

-

-0.5

V

IC = -150 mA; IB = -15 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

-

-

-1

V

VBEsat

base-emitter saturation

voltage

IC = -500 mA; IB = -50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

-

-

-1.2

V

fT

transition frequency

VCE = -10 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

aaa-040556

100

200

300

hFE

0

IC (mA)

-10-1

-104

-103

-1

-102

-10

(1)

(2)

(3)

VCE = -2 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-040560

-0.4

-0.6

-0.2

-0.8

-1,0

IC

(A)

0

-9 mA

IB = -10 mA

-1 mA

-2 mA

-3mA

-4 mA

-5 mA

-6 mA

-7 mA

-8 mA

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

BSR33PAS

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2024. All rights reserved

Product data sheet

9 September 2024

5 / 11