7N65FJD2 datasheet(4/10 Pages) SILAN

4 / 10 page

Silan

Microelectronics

SVS7N65D(F)(MJ)(FJ)D2_Datasheet

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Rev.:1.6

http: //www.silan.com.cn

Page 4 of 10

TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Drain-Source Voltage – VDS(V)

Drain Current – ID(A)

Source-Drain Voltage– VSD(V)

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

Figure 2. Transfer Characteristics

Gate-Source Voltage– VGS(V)

Drain-Source Voltage – VDS(V)

Figure 5. Capacitance Characteristics

Total Gate Charge – Qg(nC)

Figure 6. Gate Charge Characteristics

0.1

0.40

0.60

0.70

0.2

0.4

0.6

0.8

1.4

1.0

0.1

100

0.90

100

-55°C

25°C

150°C

-55°C

25°C

150°C

VGS=10V

VGS=20V

120

-1

Ciss=Cgs+Cgd(Cds=shorted)

Coss=Cds+Cgd

Crss=Cgd

VDS=520V

VDS=325V

VDS=130V

Note:ID=7.0A

1.2

0.50

0.80

Note: TJ=25°C

注：

1.250µS 脉冲测试

2.VGS=0V

Notes:

1.250µS pulse test

2.VDS=50V

Notes：

1. VGS=0V

2. f=1MHz

Notes:

1.250µS pulse test

2.TC=25°C

VGS=5.0V

VGS=5.5V

VGS=6.0V

VGS=7.0V

VGS=8.0V

VGS=10V

VGS=15V

Ciss

Coss

Crss

100

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