PM50CSD120 datasheet(3/8 Pages) MITSUBISHI

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CSD120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

Parameter

Symbol

Supply Voltage Protected by

OC & SC

Supply Voltage (Surge)

Module Case Operating

Temperature

Storage Temperature

Isolation Voltage

Condition

VCC(surge)

Tstg

Viso

Ratings

VCC(PROT)

800

1000

–20 ~ +100

–40 ~ +125

2500

Unit

°C

Vrms

VD = 13.5 ~ 16.5V, Inverter Part,

Tj = 125

°C Start

Applied between : P-N, Surge value or without switching

(Note-1)

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

(Note-1) TC measurement point is as shown below. (Base plate depth 3mm)

TOTAL SYSTEM

65mm

ELECTRICAL CHARACTERISTICS (Tj = 25

°C, unless otherwise noted)

INVERTER PART

3.2

2.8

3.5

2.5

0.3

1.0

3.5

1.2

Min.

Typ.

Max.

Collector-Emitter

Saturation Voltage

Collector-Emitter

Cutoff Current

–IC = 50A, VD = 15V, VCIN = 15V

(Fig. 2)

Tj = 25

°C

Tj = 125

°C

Parameter

Symbol

Test Condition

VCE(sat)

ICES

VEC

ton

trr

tc(on)

toff

tc(off)

Limits

—

0.5

—

2.4

2.1

2.5

1.0

0.15

0.4

2.5

0.7

—

Tj = 25

°C

Tj = 125

°C

FWDi Forward Voltage

Switching Time

VD = 15V, VCIN = 15V

↔0V

VCC = 600V, IC = 50A

Tj = 125

°C

Inductive Load (upper and lower arm)

(Fig. 3)

VCE = VCES, VCIN = 15V

(Fig. 4)

VD = 15V, IC = 50A

VCIN = 0V, Pulsed

(Fig. 1)

µs

Unit

0.38

0.70

0.23

0.36

0.027

°C/W

Rth(j-c)Q

Rth(j-c)F

Rth(j-c’)Q

Rth(j-c’)F

Rth(c-f)

Inverter IGBT part (per 1 element), (Note-1)

Inverter FWDi part (per 1 element), (Note-1)

Inverter IGBT part (per 1 element), (Note-2)

Inverter FWDi part (per 1 element), (Note-2)

Case to fin, Thermal grease applied (per 1 module)

Symbol

Parameter

Test Condition

Unit

Limits

Min.

Typ.

Max.

—

Junction to case Thermal

Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

(Note-2) TC measurement point is just under the chips.

If you use this value, Rth(f-a) should be measured just under the chips.

PM50CSD120 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

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