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B3D10120F Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR

Part # B3D10120F
Description  SiC Schottky Diode
PDF  8 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B3D10120F Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR

  B3D10120F Datasheet HTML 1Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 2Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 3Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 4Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 5Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 6Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 7Page - BASIC SEMICONDUCTOR B3D10120F Datasheet HTML 8Page - BASIC SEMICONDUCTOR  
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SiC Schottky Diode
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Thermal Characteristics
Symbol
Parameter
Value
Unit
Min.
Typ.
Max.
0.89
1.15
K/W
Thermal resistance from junction to case
R
th(jc)
Maximum Ratings (T
C=25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Unit
Value
V
RRM
V
RSM
E
AS
I
F
I
FSM
I
FRM
I
F,Max
∫i 2dt
P
tot
T
j
T
stg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Single pulse avalanche energy
Continuous forward current
Non-repetitive forward surge current
Repetitive forward surge current
Non-repetitive peak forward current
i2t value
Power dissipation
Operating junction temperature
Storage temperature
T
C=25°C
T
C=25°C
T
C=110°C
T
C=25°C, tp=10ms
T
C=25°C, tp=10ms, Half sine wave
T
C=25°C, tp=10ms, Half sine wave
1200
1200
98
90
T
C=110°C, tp=10ms, Half sine wave
T
C=25°C, tp=10μs, pulse
T
C=110°C, tp=10μs, pulse
80
60
840
790
40.5
33
T
C=135°C
15
T
C=155°C
10
169
73
-55~175
-55~175
V
V
mJ
A
A
A
A
A2S
W
°C
°C
T
C=25°C, L=1mH, IAS=14A,
V=140V
B3D10120F
Rev. 0.0



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