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B3D40065HC Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B3D40065HC Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() SiC Schottky Diode 2 / 7 www.basicsemi.com Maximum Ratings (T C=25°C unless otherwise specified) Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. 0.6*/ 0.3** 0.86* /0.43** K/W Thermal resistance from junction to case R th(jc) * Per Leg, ** Per Device Rev. 0.0 Symbol Parameter Test conditions Unit Value V RRM V RSM E AS I F I FSM I FRM ∫i 2dt P tot T j T stg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Single pulse avalanche energy Continuous forward current Non-repetitive forward surge current Repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature T C=25°C T C=25°C T C=110°C T C=25°C, tp=10ms T C=25°C, tp=10ms, Half sine wave T C=25°C, tp=10ms, Half sine wave 650 650 95.22* 150* T C=110°C, tp=10ms, Half sine wave 140* 120* 112.5* 103*/206** T C=135°C 42*/84** T C=155°C 20*/40** 250* 108* -55~175 -55~175 V V mJ A A A A2S W °C °C T C=25°C, L=1mH, IAS=13.8A, V=140V B3D40065HC |
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