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TPW65R075DFD Datasheet(PDF) 3 Page - Wuxi Unigroup Microelectronics Company |
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TPW65R075DFD Datasheet(HTML) 3 Page - Wuxi Unigroup Microelectronics Company |
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3 / 10 page ![]() TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com Electrical Characteristics TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 10 μA VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 5000 Gate-Source Leakage Current IGSS VGS = ±30V -- -- ± 100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 22A -- 0.058 0.075 Ω Gate Resistance RG f = 1.0MHz open drain -- 1 -- Ω Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 4640 -- pF Output Capacitance Coss -- 123 -- Reverse Transfer Capacitance Crss -- 3.55 -- Total Gate Charge Qg VDD = 400V, ID = 22A, VGS = 10V -- 81 -- nC Gate-Source Charge Qgs -- 25 -- Gate-Drain Charge Qgd -- 24 -- Turn-on Delay Time td(on) VDD = 400V, ID = 22A, RG = 25Ω -- 107 -- ns Turn-on Rise Time tr -- 80 -- Turn-off Delay Time td(off) -- 164 -- Turn-off Fall Time tf -- 52 -- Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 22A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time trr VR = 400V, IS=22A, diF/dt = 100A/μs -- 176 -- ns Reverse Recovery Charge Qrr -- 1.4 -- μC Peak Reverse Recovery Current Irrm -- 16 -- A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. ID = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG 3 |
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