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SBT80-10J Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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SBT80-10J Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 3 page ![]() SBT80-10J No.7790-2/3 Package Dimensions Electrical Connection unit : mm 1178A Anode Anode Cathode 1.6 1.2 0.75 10.0 3.2 2.55 2.55 2.4 4.5 2.8 0.7 2.55 2.55 1 23 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML 0 1.0 10 2.5 2.0 1.0 0.5 1.5 5 7 2 3 5 7 2 3 5 7 2 3 5 2 3 0.01 0.1 IF -- VF IT08511 0 10 1.0 3 100 7 5 7 3 2 5 7 3 2 5 20 40 60 80 100 120 IR -- VR (3) (1) 0 0 8 10 14 12 6 2 4 2 110 69 8 7 45 3 PF(AV) -- IO IT08513 (4) (3) (1) 0 0 4.0 3.0 5.0 7.0 6.0 2.0 1.0 3.5 2.5 4.5 6.5 5.5 1.5 0.5 100 120 80 60 40 20 PR(AV) -- VRM (2) (4) (2) Tj=150 °C 25°C IT08512 IT08514 Tj=150 °C max 150° C typ 125 °C typ 100 °C typ Forward Voltage, VF -- V Reverse Voltage, VR -- V Peak Reverse Voltage, VRM -- V Average Forward Current, IO -- A Represented by max 180 ° 360 ° θ 360 ° 180 ° 360 ° VR (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180 ° (4)Sine wave θ=180 ° Sine wave Sine wave θ 360 ° VR Rectangular wave Rectangular wave PR max at Tj=150°C |
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