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SBT80-10J Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # SBT80-10J
Description  Schottky Barrier Diode (Twin TypeCathode Common) 100V, 8A Rectifier
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

SBT80-10J Datasheet(HTML) 2 Page - Sanyo Semicon Device

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SBT80-10J
No.7790-2/3
Package Dimensions
Electrical Connection
unit : mm
1178A
Anode
Anode
Cathode
1.6
1.2
0.75
10.0
3.2
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
1
23
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220ML
0
1.0
10
2.5
2.0
1.0
0.5
1.5
5
7
2
3
5
7
2
3
5
7
2
3
5
2
3
0.01
0.1
IF -- VF
IT08511
0
10
1.0
3
100
7
5
7
3
2
5
7
3
2
5
20
40
60
80
100
120
IR -- VR
(3)
(1)
0
0
8
10
14
12
6
2
4
2
110
69
8
7
45
3
PF(AV) -- IO
IT08513
(4)
(3)
(1)
0
0
4.0
3.0
5.0
7.0
6.0
2.0
1.0
3.5
2.5
4.5
6.5
5.5
1.5
0.5
100
120
80
60
40
20
PR(AV) -- VRM
(2)
(4)
(2)
Tj=150
°C
25°C
IT08512
IT08514
Tj=150
°C max
150°
C typ
125
°C typ
100
°C typ
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
Peak Reverse Voltage, VRM -- V
Average Forward Current, IO -- A
Represented by max
180
°
360
°
θ
360
°
180
°
360
°
VR
(1)Rectangular wave
θ=300°
(2)Rectangular wave
θ=240°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180
°
(4)Sine wave
θ=180
°
Sine wave
Sine wave
θ
360
°
VR
Rectangular
wave
Rectangular
wave
PR max at Tj=150°C


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