AS6C2008 datasheet(1/13 Pages) ALSC

Part #	AS6C2008

Description	256K X 8 BIT LOW POWER CMOS SRAM

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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1 / 13 page

Rev. 1.1

256K X 8 BIT LOW POWER CMOS SRAM

FEATURES

Access time : 55ns

Low power consumption:

Operating current :20mA (TYP.)

Standby current :

1µA (TYP.) LL-version

Single 2.7V ~ 3.6V power supply

Fully static operation

Tri-state output

Data retention voltage : 1.5V (MIN.)

All Products ROHS Compliant

Package : 32-pin 450 mil SOP

32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm sTSOP

36-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The AS6C2008 is a 2,097,152-bit low power CMOS

static random access memory organized as 262,144

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The AS6C2008 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The AS6C2008 operates from a single power

supply of 2.7V ~ 3.6V

.

PRODUCT FAMILY

Power Dissipation

Product

Family

Operating

Temperature

Vcc Range

Speed

Standby(ISB1,TYP.)

Operating(Icc,TYP.)

AS6C2008 (I)

-40 ~ 85

ºC

2.7 ~ 3.6V

55ns

20µA(L)/1µA(LL)

20mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

256Kx8

MEMORY ARRAY

COLUMN I/O

A0-A17

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A17

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

VCC

Power Supply

VSS

Ground

NC

No Connection

®

February 2007

AS6C2008

10/February/07, v.1.0

Alliance Memory Inc.

Page 1 of 13

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