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HERF1007G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # HERF1007G
Description  Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

HERF1007G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  HERF1007G Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd HERF1007G Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
HERF1001G - HERF1008G
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: ITO-220AB molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
oC/ 0.25” (6.35mm) from case for 10
seconds.
Mounting torque: 5 in – 1bs. max.
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HERF
1001G
HERF
1002G
HERF
1003G
HERF
1004G
HERF
1005G
HERF
1006G
HERF
1007G
HERF
1008G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800 1000
V
Maximum Average Forward Rectified
Current @TC = 100
oC
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
125
A
Maximum Instantaneous Forward Voltage
@ 5.0A
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TA=25
oC at Rated DC Blocking Voltage
@ TA=125
oC
IR
10
400
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
60
40
pF
Typical Thermal Resistance (Note 3)
RθJC
3.0
oC/W
Operating Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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