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MR856 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MR856 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() - 414 - MR850 THRU MR858 3.0 AMPS. Fast Recovery Rectifiers Voltage Range 50 to 800 Volts Current 3.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Axial leads, solderable per MIL- STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260 ℃/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension Weight: 1.2 grams DO-201AD Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MR 850 MR 851 MR 852 MR 854 MR 856 MR 858 Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length @TA = 55 ℃ I(AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous Forward Voltage @ 3.0A VF 1.25 1.3 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=100 ℃ IR 10 200 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 100 150 nS Typical Junction Capacitance ( Note 2 ) Cj 60 pF Typical Thermal Resistance ( Note 3 ) R θJA 45 O C/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes:1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B. |
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