Nexperia

PUSB3FC4

Very low capacitance unidirectional ESD protection diode array

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

5.5

9

-

V

ITLP = 8 A; tp = 100 ns; Tamb = 25 °C

[1]

-

3.5

-

V

ITLP = 16 A; tp = 100 ns; Tamb = 25 °C

[1]

-

5.5

-

V

VCL

clamping voltage

IPPM = 7 A; tp = 8/20 µs; Tamb = 25 °C

[2]

-

3.5

-

V

IRM

reverse leakage current VRWM = 3.3 V; Tamb = 25 °C

-

1

100

nA

IR = 10 A; tp = 100 ns; Tamb = 25 °C

[1]

-

0.26

-

Ω

Rdyn

dynamic resistance

IR = -10 A; tp = 100 ns; Tamb = 25 °C

[1]

-

0.26

-

Ω

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

-

0.29

0.34

pF

[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 on pin 2

[2] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

f (Hz)

107

1010

109

108

aaa-039810

-5

-3

-7

-1

1

S21dd

(dB)

-9

Fig. 3. Differential mode insertion loss; typical values

VR (V)

0

4

3

1

2

aaa-039275

0.4

0.8

1.2

a

0

Fig. 4. Relative capacitance as a function of reverse

standoff voltage; typical values

PUSB3FC4

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2024. All rights reserved

Product data sheet

18 September 2024

4 / 12