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N24C256X Datasheet(PDF) 3 Page - ON Semiconductor |
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N24C256X Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 11 page ![]() N24C256X www.onsemi.com 3 Table 4. D.C. OPERATING CHARACTERISTICS (Vcc = 1.7 V to 5.5 V, Ta = −40 to +125°C, unless otherwise specified) Symbol Parameter Test Conditions Min Max Units ICCR Read Current Read, fSCL = 400 kHz/1 MHz 1 mA ICCW Write Current 2.5 mA ISB Standby Current All I/O Pins at GND or VCC 2 mA IL I/O Pin Leakage Pin at GND or VCC 2 mA VIL Input Low Voltage −0.5 0.24 V VIH Input High Voltage 0.96 5.5 V VHYS Input Hysteresis Voltage 90 mV VOL Output Low Voltage IOL = 3.0 mA 0.4 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 5. PIN IMPEDANCE CHARACTERISTICS Symbol Parameter Conditions Min Max Units CIN (Note 5) SDA I/O Pin Capacitance VIN = 0 V 8 pF CIN (Note 5) Input Capacitance (other pins) VIN = 0 V 6 pF 5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. |
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