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BAS716-Q Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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BAS716-Q Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 8 page ![]() Nexperia BAS716-Q Low-leakage diode mbg704 10 1 102 IFSM (A) 10-1 tp (µs) 1 104 103 10 102 Based on square wave currents. Tj(init) = 25 °C Fig. 3. Non-repetitive peak forward current as a function of pulse duration; typical values mdb826 200 0 50 100 150 102 10 1 10- 1 IR (nA) Tj (°C) (1) (2) VR = 75 V (1) Maximum values (2) Typical values Fig. 4. Reverse current as a function of junction temperature mdb827 0 5 10 20 2.0 1.5 0.5 0 1.0 15 Cd (pF) VR (V) f = 1 MHz; Tamb = 25 °C Fig. 5. Diode capacitance as a function of reverse voltage; typical values 11. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 1 mA Fig. 6. Reverse recovery time test circuit and waveforms BAS716-Q All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2024. All rights reserved Product data sheet 3 December 2024 4 / 8 |
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