Parameter

Max.

Units

ˆ

100

†

70

†

A

Pulsed Drain Current

ˆ

520

Power Dissipation

3.8

W

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚ˆ

390

mJ

Avalanche Current



See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

‡

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒˆ

4.6

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

S

D

G

Absolute Maximum Ratings

†

Description

06/30/04

www.irf.com

1

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Benefits

PD -95486

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

°C/W

Junction-to-Ambient(PCB Mounted,steady-state)**

–––

40

Thermal Resistance

IRF1407SPbF

IRF1407LPbF

TO-262

IRF1407L

IRF1407S

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF1407L) is available for low-

profile applications.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer

to application note #AN-994.