IRLL2705PbF

S

D

G

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application

05/28/04

Description

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Surface Mount

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Dynamic dv/dt Rating

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Logic-Level Gate Drive

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Fast Switching

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Ease of Paralleling

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Advanced Process Technology

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Ultra Low On-Resistance

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Lead-Free

SOT-223

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Parameter

Typ.

Max.

Units

Junction-to-Amb. (PCB Mount, steady state)*

93

120

Junction-to-Amb. (PCB Mount, steady state)**

48

60

Thermal Resistance

°C/W

Parameter

Max.

Units

5.2

3.8

3.0

Pulsed Drain Current 

30

Power Dissipation (PCB Mount)**

2.1

W

Power Dissipation (PCB Mount)*

1.0

W

Linear Derating Factor (PCB Mount)*

8.3

mW/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy‚

110

mJ

Avalanche Current

3.8

A

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt ƒ

7.5

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

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