TIL923, TIL924, TIL925

TIL923A, TIL924A, TIL925A

SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS

SOOS031 – OCTOBER 1991

2

POST OFFICE BOX 655303

schematic diagrams

K

A

2E

2C

1E

1C

E

C

3

4

TIL925

TIL924

TIL923

4E

4C

3E

3C

5

6

7

8

1

2

4A

4K

3K

3A

8

7

6

5

9

10

11

12

13

14

15

16

1E

1C

2C

2E

1

2

3

4

1A

1K

2K

2A

2A

2K

1K

1A

4

3

2

1

absolute maximum ratings at 25

Input-to-output voltage (see Note 1)

±7.5 kV peak or dc (±5.3 kV rms)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-emitter voltage (see Note 2)

35 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-collector voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode reverse voltage

5 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode continuous forward current at (or below) 25

°C free-air temperature (see Note 3)

50 mA

. . . . . . .

Continuous power dissipation at (or below) 25

°C free-air temperature:

Phototransistor (see Note 4)

150 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode plus phototransistor per channel (see Note 5)

200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

– 55

°C to 100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range

– 55

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NOTES:

1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL

requirements.

2. This value applies when the base-emitter diode is open circuited.

3. Derate linearly to 100

°C free-air temperature at the rate of 0.67 mA/°C.

4. Derate linearly to 100

°C free-air temperature at the rate of 2 mW/°C.

5. Derate linearly to 100

°C free-air temperature at the rate of 2.67 mW/°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO Collector-emitter breakdown voltage

IC = 0.5 mA,

IF = 0

35

V

V(BR)ECO Emitter-collector breakdown voltage

IC = 100 µA,

IF = 0

7

V

IR

Input diode static reverse current

VR = 5 V

10

µA

IC(off)

Off-state collector current

VCE = 10 V,

IF = 0

100

nA

CTR

Current

TIL923, TIL924, TIL925

IF =2mA

VCE =1V

500%

CTR

transfer ratio

TIL923A, TIL924A, TIL925A

IF = 2 mA,

VCE = 1 V

1000%

VF

Input diode static forward voltage

IF = 20 mA

1.4

V

VCE(sat)

Collector-emitter saturation voltage

IF = 10 mA,

IC = 50 mA

1

V

Cio

Input-to-output capacitance

Vin-out = 0,

f = 1 MHz,

See Note 6

1

pF

rio

Input-to-output internal resistance

Vin-out = ±1 kV, See Note 6

1011

Ω

NOTE 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.