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ISC009N03LF2S Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # ISC009N03LF2S
Description  MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V
PDF  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC009N03LF2S Datasheet(HTML) 6 Page - Infineon Technologies AG

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StrongIRFET™ 2 Power‑Transistor, 30 V
ISC009N03LF2S
Public
Datasheet
6
Revision 1.1
https://www.infineon.com
2024‑11‑25
Table 6      Gate charge characteristics 7)
Parameter
Symbol
Values
Unit Note / Test condition
Min.
Typ.
Max.
Output charge
Q
‑
74
‑
nC
V =15 V,  =0 V
V
    See "Gate charge waveforms" for parameter definition
7)
    Defined by design. Not subject to production test.
8)
Table 7      Reverse diode
Parameter
Symbol
Values
Unit Note / Test condition
Min.
Typ.
Max.
Diode continuous forward current
I
‑
‑
174
A
T =25 °C
Diode pulse current
I
‑
‑
1364
A
Diode forward voltage
V
‑
0.77
1.0
V
V =0 V,  =50 A,  =25 °C
I
T
Reverse recovery time
t
‑
22
‑
ns
V =15 V,  =50 A, d /d =500 A/μs
I
i t
Reverse recovery charge
Q
‑
86
‑
nC
oss
DS
GS
S
C
S,pulse
SD
GS
F
j
rr
R
F
F
rr



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