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BV4 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BV4
Description  High Voltage Si-Rectifiers
PDF  1 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BV4 Datasheet(HTML) 1 Page - Diotec Semiconductor

  BV4 Datasheet HTML 1Page - Diotec Semiconductor  
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BV4, BV6
BV4, BV6
High Voltage Si-Rectifiers
Si-Hochspannungs-Gleichrichter
Version 2006-04-27
Dimensions - Maße [mm]
Nominal current
Nennstrom
100 mA
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
4000...6000 V
Plastic case
Kunststoffgehäuse
DO-15
DO-204AC
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BV4
4000
4000
BV6
6000
6000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
100 mA 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
3 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
15/17 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t1.1 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics
Kennwerte
Forward voltage – Durchlass-Spannung
Tj = 25°C
IF = 100 mA
VF
< 5 V
Leakage current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 3 µA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 60 K/W 1)
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø
±0.05
0.8
Ø
±0.05
3


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