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BV4 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BV4 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 1 page ![]() BV4, BV6 BV4, BV6 High Voltage Si-Rectifiers Si-Hochspannungs-Gleichrichter Version 2006-04-27 Dimensions - Maße [mm] Nominal current Nennstrom 100 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 4000...6000 V Plastic case Kunststoffgehäuse DO-15 DO-204AC Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BV4 4000 4000 BV6 6000 6000 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 100 mA 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 3 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 15/17 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t1.1 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Characteristics Kennwerte Forward voltage – Durchlass-Spannung Tj = 25°C IF = 100 mA VF < 5 V Leakage current – Sperrstrom Tj = 25°C VR = VRRM IR < 3 µA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 60 K/W 1) 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø ±0.05 0.8 Ø ±0.05 3 |
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