MMBT2369 datasheet(2/2 Pages) DIOTEC

2 / 2 page

MMBT2369 / MMBT2369A

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA, Tj = -55°C

IC = 30 mA, IB = 3 mA

IC = 100 mA, IB = 10 mA

MMBT2369A

VBEsat

0.7 V

–

0.85 V

1.02 V

1.15 V

1.60 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 20 V, (E open)

VCB = 20 V, Tj = 125°C, (E open)

ICBO

–

0.4 µA

30 µA

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 20 V, (B-E short)

MMBT2369A

ICES

–

0.4 µA

Collector-Emitter breakdown voltage

IC = 10 µA

V(BR)CES

40 V

–

Collector-Emitter breakdown voltage 2)IC = 10 mA

V(BR)CEO

15 V

–

Collector-Base breakdown voltage

IC = 10 µA

V(BR)CBO

40 V

–

Emitter-Base-breakdown voltage

IC = 10 µA

V(BR)EBO

4.5 V

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

––

4 pF

Small signal current gain – Kleinsignal-Stromverstärkung

VCE = 10 V, IC = 10 mA, f = 100 MHz

hfe

5–

–

Switching times – Schaltzeiten

storage time

IB1 = IB2 = IC = 10 mA

–

5 ns

13 ns

turn-on time

VCC = 3 V, IC = 10 mA,

IB1 = 3 mA

ton

–

8 ns

12 ns

turn-off time

VCC = 3 V, IC = 10 mA

IB1 = 3 mA, IB2 = 1.5 mA

toff

–

10 ns

18 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Marking - Stempelung

MMBT2369 = 1J

MMBT2369A = 1JA

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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