MMBT3906 datasheet(2/2 Pages) DIOTEC

2 / 2 page

MMBT3906

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VCEsat

–

0.25 V

0.4 V

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VBEsat

0.65 V

–

0.85 V

0.95 V

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 30 V, - VEB = 3 V

- ICEX

–

50 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 30 V, - VEB = 3 V

IEBV

–

–-

50 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 20 V, f = 100 MHz

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

–

4.5 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

10 pf

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz

–

4 dB

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

- VCC = 3 V, - VBE = 0.5 V

- IC = 10 mA, - IB1 = 1mA

–

35 ns

–

35 ns

storage time

fall time

- VCC = 3 V, - IC = 10 mA,

- IB1 = IB2 = 1 mA

–

225 ns

–

75 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

MMBT3904

Marking - Stempelung

MMBT3906 = 2A

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

MMBT3906 Datasheet(PDF) 2 Page - Diotec Semiconductor

MMBT3906 Datasheet(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Datasheet Download

Link URL