MMBT5550 datasheet(2/2 Pages) DIOTEC

2 / 2 page

MMBT5550 / MMBT5551

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

MMBT5550

MMBT5551

VBEsat

–

1.0 V

IC = 50 mA, IB = 5 mA

MMBT5550

MMBT5551

VBEsat

–

1.2 V

1.0 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 100 V, (E open)

VCB = 120 V, (E open)

MMBT5550

MMBT5551

ICBO

–

100 nA

50 nA

VCB = 100 V, Tj = 100°C, (E open)

VCB = 120 V, Tj = 100°C, (E open)

MMBT5550

MMBT5551

ICBO

–

100 µA

50 µA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 4 V, (C open)

IEBO

–

50 nA

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 10 V, f = 100 MHz

100 MHz

–

300 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

––

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

30 pf

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ,

f = 30 Hz ... 15 kHz

MMBT5550

MMBT5551

–

10 dB

8 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

MMBT5400 / MMBT5401

Marking - Stempelung

MMBT5550 = 1F

MMBT5551 = 3S

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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