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MMBTA55 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MMBTA55 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() MMBTA55 ... MMBTA56 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) MMBTA55 MMBTA56 - ICBO - ICBO – – – – 100 nA 100 nA Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 4 V, (C open) - IEB0 – – 100 nA Gain-Bandwidth Product – Transitfrequenz - IC = 100 mA, - VCE = 1 V, f = 100 MHz fT 50 MHz – – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren MMBTA05, MMBTA06 Marking - Stempelung MMBTA55 = 2H MMBTA56 = 2G(M) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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