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P1200G Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # P1200G
Description  Silicon-Rectifiers
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

P1200G Datasheet(HTML) 1 Page - Diotec Semiconductor

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P1200A ... P1200G
P1200A ... P1200G
Silicon-Rectifiers
Silizium-Gleichrichter
Version 2006-01-25
Dimensions - Maße [mm]
Nominal Current
Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...400 V
Plastic case
Kunststoffgehäuse
Ø 8 x 7.5 [mm]
P600 Style
Weight approx.
Gewicht ca.
1.3 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
P1200A
50
50
P1200B
100
100
P1200D
200
200
P1200G
400
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
12 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
80 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
400/450 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
800 A2s
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage
bei reduzierter Sperrspannung
VR ≤ 80% VRRM
VR ≤ 20% VRRM
Tj
Tj
-50...+150°C
-50...+200°C
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Type
Ø
±0.05
1.2
Ø
±0.1
8


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