Electrical Characteristics (at Ta=25°C unless otherwise noted)

Rating and Characteristic Curves (CPDH3V3-HF)

SMD ESD Protection Diode

Page 2

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Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Reverse breakdown voltage

VBR

IT = 1mA

4.0

Reverse leakage current

IR

µA

VRWM = 3.3V

1.0

V

Reverse working voltage

VRWM

3.3

V

Clamping voltage

VC

V

16

IPP = 23A, TP = 8/20µs

45

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

SP-JP009

Clamping voltage

VC

IPP = 1A, TP = 8/20µs

6.0

V

6.5

13

35

Fig.1 - Pulse Waveform

Time, (µs)

Fig.2 - Power Derating Curve

Ambient Temperature, Ta (°C)

0

0

80

100

110

5

30

10

20

25

60

20

Waveform

parameters

tr=8µs

td=20µs

70

50

10

40

30

90

15

Waveform

parameters

tr=8µs

td=20µs

td = IPP/2

0

20

60

120

40

80

100

0

25

50

75

100

150

125