Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

VP0540 Datasheet(PDF) 2 Page - Supertex, Inc

Part # VP0540
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

VP0540 Datasheet(HTML) 2 Page - Supertex, Inc

  VP0540 Datasheet HTML 1Page - Supertex, Inc VP0540 Datasheet HTML 2Page - Supertex, Inc VP0540 Datasheet HTML 3Page - Supertex, Inc VP0540 Datasheet HTML 4Page - Supertex, Inc  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
7-238
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP0535/VP0540
Switching Waveforms and Test Circuit
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ T
C = 25°C
°C/W
°C/W
TO-39
-0.2A
-0.5A
3.5W
35
125
-0.2A
-0.5A
TO-92
-0.1A
-0.5A
1.0W
125
170
-0.1A
-0.5A
* I
D (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VP0540
-400
VP0535
-350
VGS(th)
Gate Threshold Voltage
-2.5
-4.5
V
VGS = VDS, ID = -1mA
∆VGS(th)
Change in V
GS(th) with Temperature
3.5
6.0
mV/°CVGS = VDS, ID = -1mA
I
GSS
Gate Body Leakage
-100
nA
V
GS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
VGS = 0V, VDS = Max Rating
-500
µAVGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
I
D(ON)
ON-State Drain Current
-80
V
GS = -5V, VDS = -25V
-200
-350
V
GS = -10V, VDS = -25V
RDS(ON)
60
VGS = -5V, ID = -10mA
45
75
V
GS = -10V, ID = -50mA
∆RDS(ON)
Change in R
DS(ON) with Temperature
0.8
1.5
%/°CVGS = -10V, ID = -50mA
GFS
Forward Transconductance
50
70
m
VDS = -25V, ID = -50mA
C
ISS
Input Capacitance
40
60
COSS
Common Source Output Capacitance
11
20
pF
CRSS
Reverse Transfer Capacitance
3
5
t
d(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
15
t
f
Fall Time
15
VSD
Diode Forward Voltage Drop
-0.8
-1.5
V
VGS = 0V, ISD = -0.1A
trr
Reverse Recovery Time
200
ns
VGS = 0V, ISD = -0.1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VV
GS= 0V, ID =-1mA
V
GS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ns
ID = -200mA
R
GEN = 25Ω
Electrical Characteristics
Ω
– OBSOLETE
–



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com