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VP0540 Datasheet(PDF) 2 Page - Supertex, Inc |
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VP0540 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 4 page ![]() 7-238 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V VP0535/VP0540 Switching Waveforms and Test Circuit Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ T C = 25°C °C/W °C/W TO-39 -0.2A -0.5A 3.5W 35 125 -0.2A -0.5A TO-92 -0.1A -0.5A 1.0W 125 170 -0.1A -0.5A * I D (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BV DSS VP0540 -400 VP0535 -350 VGS(th) Gate Threshold Voltage -2.5 -4.5 V VGS = VDS, ID = -1mA ∆VGS(th) Change in V GS(th) with Temperature 3.5 6.0 mV/°CVGS = VDS, ID = -1mA I GSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 VGS = 0V, VDS = Max Rating -500 µAVGS = 0V, VDS = 0.8 Max Rating TA = 125°C I D(ON) ON-State Drain Current -80 V GS = -5V, VDS = -25V -200 -350 V GS = -10V, VDS = -25V RDS(ON) 60 VGS = -5V, ID = -10mA 45 75 V GS = -10V, ID = -50mA ∆RDS(ON) Change in R DS(ON) with Temperature 0.8 1.5 %/°CVGS = -10V, ID = -50mA GFS Forward Transconductance 50 70 m VDS = -25V, ID = -50mA C ISS Input Capacitance 40 60 COSS Common Source Output Capacitance 11 20 pF CRSS Reverse Transfer Capacitance 3 5 t d(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 15 t f Fall Time 15 VSD Diode Forward Voltage Drop -0.8 -1.5 V VGS = 0V, ISD = -0.1A trr Reverse Recovery Time 200 ns VGS = 0V, ISD = -0.1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. mA Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VV GS= 0V, ID =-1mA V GS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns ID = -200mA R GEN = 25Ω Electrical Characteristics Ω – OBSOLETE – |
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