Supertex inc.

Supertex inc.

1

VP0104/VP0106/VP0109

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Note: See Package Outline section for dimensions.

P-Channel Enhancement-Mode

Vertical DMOS FETs

Package Option

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Order Number / Package

BV

I

D(ON)

(max)

(min)

TO-92

-40V

8.0Ω

-0.5A

VP0104N3

-60V

8.0Ω

-0.5A

VP0106N3

-90V

8.0Ω

-0.5A

VP0109N3

TO-92

Ordering Information

S G D

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

±20V

Operating and Storage Temperature

Soldering Temperature*