3

TC6320

Symbol

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

-200

-

-

V

V

V

GS(th)

Gate threshold voltage

-1.0

-

-2.4

V

V

ΔV

GS(th)

Change in V

-

-

4.5

R

GS

Gate-source shunt resistor

10

-

50

KΩ

I

ΔR

GS

Change in R

-

-

TBD

VZ

GS

Gate-source zener voltage

13.2

-

25

V

I

ΔVZ

GS

Change in RGS with temperature

-

-

TBD

I

DSS

Zero gate voltage drain current

-

-

-10

µA

V

-

-

-1.0

mA

V

V

I

D(ON)

ON-state drain current

-1.0

-

-

A

V

-2.0

-

-

V

R

DS(ON)

Static drain-to-source ON-state resis-

tance

--

10

Ω

V

-

-

8.0

V

ΔR

DS(ON)

Change in R

-

-

1.0

G

FS

Forward transconductance

400

-

-

mmho

V

C

ISS

Input capacitance

-

-

200

pF

V

V

f = 1MHz

C

OSS

Common source output capacitance

-

-

55

C

RSS

Reverse transfer capacitance

-

-

30

t

d(ON)

Turn-ON delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-OFF delay time

-

-

20

t

f

Fall time

-

-

15

V

SD

Diode forward voltage drop

-

-

-1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

P- Channel Switching Waveforms and Test Circuit

Input

Pulse

Generator

D.U.T

OUTPUT

0V

-10V

0V

V

DD

t

d(OFF)

Input

Output

t

r

t

f

t

d(ON)

t

(ON)

t

(OFF)

90%

10%

90%

10%

10%

90%