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SC2545 Datasheet(PDF) 15 Page - Semtech Corporation

Part # SC2545
Description  High Performance Wide Input Range Dual Synchronous Buck Controller
PDF  24 Pages
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Manufacturer  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC2545 Datasheet(HTML) 15 Page - Semtech Corporation

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ã 2005 Semtech Corp.
www.semtech.com
SC2545
POWER MANAGEMENT
The conduction losses are then
P
bc=IQ2,rms
2
R
ds(on).
where R
ds(on) is the channel resistance of bottom MOSFET.
If the input voltage to output voltage ratio is high (e.g.
V
in=12V, Vo=1.5V), the duty ratio D will be small. Since
the bottom switch conducts with duty ratio (1-D), the
corresponding conduction losses can be quite high.
Due to non-overlapping conduction between the top and
the bottom MOSFET’s, the internal body diode or the
external Schottky diode across the drain and source
terminals always conducts prior to the turn on of the
bottom MOSFET. The bottom MOSFET switches on with
only a diode voltage between its drain and source
terminals. The switching loss is negligible due to near zero-
voltage switching.
The gate losses are estimated as
Bottom Switch
The RMS current in bottom switch is given by


'

,
,

R
UPV


4

G


The total bottom switch losses are then
P
b=Pbc+Pbg.
Main Control Loop Design
The goal of compensation is to shape the frequency re-
sponse charatericstics of the buck converter to achieve
a better DC accuracy and a faster transient response
for the output voltage, while maintaining the loop stabil-
ity.
The block diagram in Figure 10 represents the control
loop of a buck converter designed with the SC2545. The
control loop consists of a compensator, a PWM modula-
tor, and an LC filter.
The LC filter and PWM modulator represent the small
signal model of the buck converter operating at fixed
switching frequency. The transfer function of the model
is given by:
/&
V
5
V/
&
V5
9
9
9
9
(65
P
,1
&
2







˜

I
9
4
5
5
3
V
FF
J
JW
J
EJ
Once the power losses for the top and bottom MOSFET’s
are known, thermal and package design at component
and system level should be done to verify that the
maximum die junction temperature (T
j,max, usually 125
o
C)
is not exceeded under the worst-case condition. The
equivalent thermal impedance from junction to ambient
(T ja) should satisfy
T ja depends on the die to substrate bonding, packaging
material, the thermal contact surface, thermal compound
property, the available effective heat sink area, and the
air flow condition (natual or forced convection). Actual
temperature measurement of the prototype should be
carried out to verify the thermal design.

3
7
7
ORVV
PD[

D
PD[
M
MD

d
T
9R
5()
=V
5HVU


($
5()
02'8/$725
=I
3:0
/
&R
(55287
Fig. 10. Block diagram of the control loop.
where V
IN is the input voltage, Vm is the amplitude of the
internal ramp, and R is the equivalent load.
The model is a second order system with a finite DC gain,
a complex pole pair at Fo, and an ESR zero at Fz, as
shown in Figure 11. The locations of the poles and zero
are determined by:
2
2
/&
)
S


2
VU
=
&
)
H
5


S
Applications Information (Cont.)



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