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SC2545 Datasheet(PDF) 15 Page - Semtech Corporation |
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SC2545 Datasheet(HTML) 15 Page - Semtech Corporation |
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15 / 24 page ![]() 15 ã 2005 Semtech Corp. www.semtech.com SC2545 POWER MANAGEMENT The conduction losses are then P bc=IQ2,rms 2 R ds(on). where R ds(on) is the channel resistance of bottom MOSFET. If the input voltage to output voltage ratio is high (e.g. V in=12V, Vo=1.5V), the duty ratio D will be small. Since the bottom switch conducts with duty ratio (1-D), the corresponding conduction losses can be quite high. Due to non-overlapping conduction between the top and the bottom MOSFETs, the internal body diode or the external Schottky diode across the drain and source terminals always conducts prior to the turn on of the bottom MOSFET. The bottom MOSFET switches on with only a diode voltage between its drain and source terminals. The switching loss is negligible due to near zero- voltage switching. The gate losses are estimated as Bottom Switch The RMS current in bottom switch is given by ' , , R UPV 4 G The total bottom switch losses are then P b=Pbc+Pbg. Main Control Loop Design The goal of compensation is to shape the frequency re- sponse charatericstics of the buck converter to achieve a better DC accuracy and a faster transient response for the output voltage, while maintaining the loop stabil- ity. The block diagram in Figure 10 represents the control loop of a buck converter designed with the SC2545. The control loop consists of a compensator, a PWM modula- tor, and an LC filter. The LC filter and PWM modulator represent the small signal model of the buck converter operating at fixed switching frequency. The transfer function of the model is given by: /& V 5 V/ & V5 9 9 9 9 (65 P ,1 & 2 I 9 4 5 5 3 V FF J JW J EJ Once the power losses for the top and bottom MOSFETs are known, thermal and package design at component and system level should be done to verify that the maximum die junction temperature (T j,max, usually 125 o C) is not exceeded under the worst-case condition. The equivalent thermal impedance from junction to ambient (T ja) should satisfy T ja depends on the die to substrate bonding, packaging material, the thermal contact surface, thermal compound property, the available effective heat sink area, and the air flow condition (natual or forced convection). Actual temperature measurement of the prototype should be carried out to verify the thermal design. 3 7 7 ORVV PD[ D PD[ M MD d T 9R 5() =V 5HVU ($ 5() 02'8/$725 =I 3:0 / &R (55287 Fig. 10. Block diagram of the control loop. where V IN is the input voltage, Vm is the amplitude of the internal ramp, and R is the equivalent load. The model is a second order system with a finite DC gain, a complex pole pair at Fo, and an ESR zero at Fz, as shown in Figure 11. The locations of the poles and zero are determined by: 2 2 /& ) S 2 VU = & ) H 5 S Applications Information (Cont.) |
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