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MBR20100CD-HF Datasheet(PDF) 1 Page - Comchip Technology

Part # MBR20100CD-HF
Description  SMD Schottky Barrier Rectifiers
PDF  4 Pages
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Manufacturer  COMCHIP [Comchip Technology]
Direct Link  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

MBR20100CD-HF Datasheet(HTML) 1 Page - Comchip Technology

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Reverse Voltage: 40 to 200 V
Forward Current: 20 A
RoHS Device
MBR2040CD-HF Thru. MBR20200CD-HF
Comchip Technology CO., LTD.
Halogen Free
Features
QW-JB109
Page 1
REV:A
- For use in low voltage, high frequency inverters
free wheeling, and polarity protection applications.
- Metal silicon junction, majority carrier conduction.
- High current capability.
- Low power loss, high efficiency.
- Plastic package has underwrites laboratory
flammability classification 94V-0.
Flame retardant epoxy molding compound.
Mechanical data
- Case: TO-252/DPAK, molded plastic.
- Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
- Polarity: As marked.
SMD Schottky Barrier Rectifiers
Dimensions in inches and (millimeters)
TO-252/DPAK
Circuit Diagram
3
2
1
0.268(6.80)
0.252(6.40)
0.202(5.13)
0.218(5.53)
0.248(6.30)
0.232(5.90)
0.094(2.40)
0.087(2.20)
0.024(0.61)
0.016(0.41)
0.285(7.25)
0.270(6.85)
0.094(2.39)
0.086(2.19)
0.005(0.12)
0.000(0.00)
0.130(3.30)
0.073(1.85)
0.057(1.45)
3
2
1
2
0.039(1.00)
0.024(0.60)
0.114(2.90)
0.033(0.85)
0.018(0.45)
0.024(0.61)
0.016(0.41)
Maximum Ratings and Electrical Characteristics (at TA=25°C, unless otherwise specified)
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Unit
Symbol
Parameter
MBR2040CD-HF
Peak forward surge current: 8.3ms
single half sine-wave superimposed
on rated load (JEDEC Method)
Max. forward voltage at 10A per leg
IFSM
VF
A
V
Max. recurrent peak reverse voltage
VRRM
Max. RMS voltage
Max. DC blocking voltage
Max. average forward current
(see Fig.1)
VRMS
VDC
IF(AV)
V
V
V
40
40
28
A
100
100
70
200
200
140
20
150
0.7
MBR2060CD-HF
60
60
42
MBR20100CD-HF MBR20150CD-HF
150
150
105
MBR20200CD-HF
Rated DC blocking voltage TJ=125°C
Typical thermal resistance
IR
RθJC
mA
°C/W
0.05
20
2
Operating junction and storage
temperature range
TJ, TSTG
°C
-50 to +150
Max. DC reverse current at TJ=25°C
-55 to +175
0.8
0.85
0.92
Junction capacitance (Note 1)
CJ
700
500
400
300
250
pF
Notes: 1. Measured at 1MHz and applied reverse voltage of 4VDC.


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