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HT9170D Datasheet(PDF) 3 Page - Holtek Semiconductor Inc |
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HT9170D Datasheet(HTML) 3 Page - Holtek Semiconductor Inc |
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3 / 13 page ![]() Approximate internal connection circuits Absolute Maximum Ratings Supply Voltage ............................................ -0.3V to 6V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -20°Cto75°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 2.5 5 5.5 V IDD Operating Current 5V ¾¾ 3.0 7 mA ISTB Standby Current 5V PWDN=5V ¾ 10 25 mA VIL ²Low² Input Voltage 5V ¾¾ ¾ 1.0 V VIH ²High² Input Voltage 5V ¾ 4.0 ¾¾ V IIL ²Low² Input Current 5V VVP=VVN=0V ¾¾ 0.1 mA IIH ²High² Input Current 5V VVP=VVN=5V ¾¾ 0.1 mA ROE Pull-high Resistance (OE) 5V VOE=0V 60 100 150 k W RIN Input Impedance (VN, VP) 5V ¾¾ 10 ¾ M W IOH Source Current (D0~D3, EST, DV) 5V VOUT =4.5V -0.4 -0.8 ¾ mA IOL Sink Current (D0~D3, EST, DV) 5V VOUT =0.5V 1.0 2.5 ¾ mA fOSC System Frequency 5V Crystal=3.5795MHz 3.5759 3.5795 3.5831 MHz HT9170B/HT9170D Rev. 1.10 3 September 24, 2002 V - V + O P E R A T I O N A L A M P L I . I E R V N V P G S X 1 X 2 O S C I L L A T O R C M O S I N P u l l - h i g h C M O S O U T T r i s t a t e E N C M O S O U T C M O S I N / O U T V R E . O P A O P A 2 0 p . 1 0 M 1 0 p . C M O S I N P u l l - l o w |
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