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2SC5041 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC5041 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:ENN4779 2SC5041 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21805TN (PC)/12599HA (KT)/91294MT (KOTO) BX-0709 No.4779–1/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2039D [2SC5041] Features · High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. · On-chip damper diode. ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Tc=25˚C r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 0 6 1V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 8V e g a t l o V e s a B - o t - r e t t i m EV O B E 6V t n e r r u C r o t c e ll o CIC 7A ) e s l u P ( t n e r r u C r o t c e ll o CI P C 6 1A n o i t a p i s s i D r o t c e ll o CPC 0 . 3W 0 6W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o C I O B C V B C I , V 0 0 8 = E 0 =0 1A µ I S E C V E C R , V 0 0 6 1 = E B 0 =0 . 1A m e g a t l o V n i a t s a S r e t t i m E - o t - r o t c e ll o CV ) s u s ( O E C IC I , A m 0 0 1 = B 0 =0 0 8V t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 = C 0 =0 40 3 1A m e g a t l o V n o i t a r u t a S r e t t i m E - o t - r o t c e ll o CV ) t a s ( E C IC I , A 5 = B A 5 2 . 1 =5 V e g a t l o V n o i t a r u t a S r e t t i m E - o t - e s a BV ) t a s ( E B IC I , A 5 = B A 5 2 . 1 =5 . 1V 16.0 2.0 2.8 1.0 5.6 3.1 2.0 0.6 5.45 5.45 12 3 3.4 Continued on next page. |
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