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IRFS31N20DPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRFS31N20DPBF
Description  HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A )
PDF  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFS31N20DPBF Datasheet(HTML) 1 Page - International Rectifier

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3/1/04
www.irf.com
1
SMPS MOSFET
HEXFET® Power MOSFET
l High Frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate to Drain to Reduce Switching
Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
200V
0.082
Ω
31A
Applicable Off Line SMPS Topologies
l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes
 through † are on page 11
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
D2Pak
IRFS31N20DPbF
TO-220AB
IRFB31N20DPbF
TO-262
IRFSL31N20DPbF
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
31
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
21
A
IDM
Pulsed Drain Current

124
PD @TA = 25°C
Power Dissipation
‡
3.1
W
PD @TC = 25°C
Power Dissipation
200
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
2.1
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
†
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
PD - 94946


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