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EN25B05T-75VIP Datasheet(PDF) 30 Page - Eon Silicon Solution Inc. |
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EN25B05T-75VIP Datasheet(HTML) 30 Page - Eon Silicon Solution Inc. |
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30 / 30 page ![]() This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 30 EN25B05 Rev. B, Issue Date: 2006/12/26 Revisions List Revision No Description Date A Initial release 2006/10/18 B 1. Change clock rate from 50MHz to 75MHz, Page program time 1.4 ms typical to 1.5 ms typical Sector erase time 100 to 500 ms typical to 300 to 500 ms Chip erase time 1 seconds to 1.5 seconds typical in page 1 2. Correct Table 5. Manufacturer and Device Identification (ID7-ID0) : (Bottom Boot) 30h to 95h / (Top Boot) 40h to 25h (ID15-ID0) : 2011h to 2010h in page 9 3. Change Table 8 DC Characteristics in page 21h (1) Add ICC3 for 75MHz 4. Change Table 10 to 75MHz AC Characteristics in page 22 (1) Change F R from 50 to 75MHz (2) Change f R from 33 to 50MHz (3) Change t CLH from 9ns to 6ns (4) Change t CLL from 9ns to 6ns (5) Change t SHQZ from 9ns to 6ns (6) Change t HLQZ from 9ns to 6ns (7) Change t HHQZ from 9ns to 6ns (8) Change t CLQV from 9ns to 6ns (9) Change Page program time 1.4ms typical to 1.5ms (10)Change 16KB Sector erase time 0.2 / 0.4seconds to 0.5 / 1 seconds for typical and maximum (11) Change 4KB Sector erase time 0.15 / 0.3 seconds to 0.3 / 0.6 seconds for typical and maximum (12) Change Chip erase time 1 / 2 seconds to 1.5 / 3 seconds for typical and maximum 5. Add Table 11: 50MHz AC Characteristics in page 23 (1) Change Page program time 1.4ms typical to 1.5ms (2) Change 16KB Sector erase time 0.2 / 0.4 seconds to 0.5 / 1 seconds for typical and maximum (3) Change 4KB Sector erase time 0.15 / 0.3 seconds to 0.3 / 0.6 seconds for typical and maximum (4) Change Chip erase time 1 / 2 seconds to 1.5 / 3 seconds for typical and maximum 6. Add 75MHz option in Ordering Information in page 29 2006/12/26 |
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