WU X I C H IN A RESOURCES HUAJIN G MICROELECTRONICS CO., LTD. Page 4 of 10

20 12

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R

Huajing Discrete Devices

CS2N60F A9H

Tc , Case Temperature , C

50

0

0

25

100

75

125

150

8

16

24

Characteristics Curve：

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

Rectangular Pulse Duration,Seconds

Vds , Drain-to-Source Voltage , Volts

0

0

1

5

3

2

4

10

15

20

25

TC , Case Temperature , C

50

0

0.5

1.0

1.5

2.0

2.5

0

25

150

100

75

125

Vds , Drain-to-Source Voltage , Volts

10

1

0.01

0.1

1

10

100

1000

Figure

2

Maximun Power Dissipation vs Case Temperature

Figure

5

Maximum Effective Thermal Impendance , Junction to Case

Figure

4

Typical Output Characteristics

Figure

3

Maximum Continuous Drain Current vs Case Temperature

Figure

1

Maximun Forward Bias Safe Operating Area

1 ms

10ms

DC

OPERATION IN THIS AREA

MAY BE LIMITED BY RDS(ON)

TJ=MAX RATED

TC=25℃ Single Pulse

VGS=15V

VGS=5.5V

VGS=6.5V

VGS=6V

VGS=7V

PDM

t2

t1

NOTES：

DUTY FACTOR ：D=t1/ t2

PEAK Tj=PDM*ZthJC*RthJC+TC

50%

20%

10%

5%

Single pulse

2%

1%

PULSE DURATION=10μs

DUTY FACTOR=0.5%MAX

Tc = 25℃

100μs

VGS=4.5V