2SA821 datasheet(1/1 Pages) TEL

Part #	2SA821

Description	Plastic-Encapsulated Transistors

PDF	1 Pages

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2SA821

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.25

W (Tamb=25

℃)

Collector current

ICM : -0.03

A

Collector-base voltage

V(BR)CBO : -210

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -50

µA , I

E=0

-210

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -0.1 mA , IB=0

-210

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -50µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-150V, IE=0

-1

µA

Emitter cut-off current

IEBO

VEB= -4.5 V ,

IC=0

-1

µA

DC current gain

hFE

VCE=-3 V, IC= -5mA

56

270

Collector-emitter saturation voltage

VCEsat

IC= -2mA, IB= -0.2mA

-0.6

V

Transition frequency

f T

VCE=-5V, IC= -2mA

30

MHz

Output capacitance

Cob

VCE=-10V,IE=0,f=1MHz

12

pF

CLASSIFICATION OF hFE

Rank

N

P

Q

Range

56-120

82-180

120-270

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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