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2SA933AS Datasheet(PDF) 1 Page - TRANSYS Electronics Limited

Part # 2SA933AS
Description  Plastic-Encapsulated Transistors
PDF  1 Pages
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Manufacturer  TEL [TRANSYS Electronics Limited]
Direct Link  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

2SA933AS Datasheet(HTML) 1 Page - TRANSYS Electronics Limited

  2SA933AS Datasheet HTML 1Page - TRANSYS Electronics Limited  
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TO-92S Plastic-Encapsulated Transistors
2SA933AS
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.2 W (Tamb=25
℃)
Collector current
I CM : -0.15 A
Collector-base voltage
V(BR)CBO : -60 V
Operating and storage junction temperature range
TJ, Tstg: -55
℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -50
µA , I
E=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=- 50µA, IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB= -6V, IC=0
-0.1
µA
DC current gain
hFE
VCE=-6 V, IC= -0.1A
120
560
Collector-emitter saturation voltage
VCEsat
IC= -50mA, IB=-5mA
-0.5
V
Transition frequency
f T
VCE=-12V, IC=-2mA
F=30MHz
120
MHz
CLASSIFICATION OF hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
Transys
Electronics
LI M ITE D


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