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BAS40W Datasheet(PDF) 1 Page - TRANSYS Electronics Limited |
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BAS40W Datasheet(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 1 page ![]() 2. 30¡ À0. 05 1. 25¡ À0. 05 BAS40W SERIES SCHOTTKY DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25 ℃) Collector current IF: 200 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) R IR= 10µA 40 V Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=10mA through IR=10mA to IR=1mA 5 nS Unit: mm SOT-323 |
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