Fast Soft Recovery Rectifier Diode

STTH12S06FP

www.iscsemi.com

1

FEATURES

·

Ultrafast recovery

·

Low reverse recovery current

·

Low thermal resistance

APPLICATIONS

·

Antisaturation diode

·

Snubber diode

·

SMPS

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

600

V

IF(AV)

Average Rectified Forward Current

12

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoida

100

A

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.6

℃

/W

ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%)

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

VF

Forward voltage drop

IF= 12A ;Tj=25℃

--

--

3.4

V

VF

Forward voltage drop

IF= 12A ;Tj=150℃

--

1.5

1.9

V

IR

Reverse leakage current

VR= VRWM;Tj=25℃

--

--

30

uA

IR

Reverse leakage current

VR= VRWM;Tj=125℃

--

35

400

uA